发明名称 Memory module including parallel test apparatus
摘要 A memory module including a plurality of ranks. Each of the ranks includes a parallel test apparatus for simultaneous testing and a parallel test control unit. In response to a parallel test mode control signal, the parallel test apparatus generates first parity data for write data including a plurality of bits and generating first data obtained by replacing a bit value of at least one bit of the plurality of bits of the write data with the first parity data during a write operation, and generates second parity data for the first data and transmitting the second parity data as read data during a read operation. The parallel test control unit controls the write operation and the read operation in a parallel test mode by generating the parallel test mode control signal. Combinations of read data from the plurality of ranks correspond to different bits of the write data.
申请公布号 US8441876(B2) 申请公布日期 2013.05.14
申请号 US201113165166 申请日期 2011.06.21
申请人 SONG WON-HYUNG;SAMSUNG ELECTRONICS CO., LTD. 发明人 SONG WON-HYUNG
分类号 G11C29/00 主分类号 G11C29/00
代理机构 代理人
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