FIN FIELD EFFECT TRANSISTOR GATE OXIDE

摘要

PURPOSE: A fin field effect transistor gate oxide is provided to secure a high quality gate dielectric for the thermal oxidation of a silicon liner. CONSTITUTION: A substrate including at least two isolation characteristic parts is provided(102). A fin substrate is formed between the isolation characteristic parts(104). A silicon liner is formed on the fin substrate(106). A silicone oxide liner is oxidized in order to form the silicon liner on the fin substrate(108). [Reference numerals] (102) Provide a substrate including at least two isolation characteristic parts; (104) Form a fin substrate deposed on the substrate and between the at least two isolation characteristic parts; (106) Form a silicon liner on the fin substrate; (108) Oxide the silicon liner to form a silicon oxide liner on the fin substrate