| 摘要 |
<P>PROBLEM TO BE SOLVED: To implement high speed switching drive of an FET by applying positive/negative potentials to a gate potential by means of an FET gate drive circuit dispensing with positive/negative power supplies and using only simple passive elements. <P>SOLUTION: A first potential above a potential for conduction of a current path, relative to a reference potential at one end of the current path, is intermittently applied to a control end via a capacitive element. A series connection circuit of a first constant voltage element and a second constant voltage element is interposed between the control end and the one end of the current path such that when the first potential is applied, the first potential generates a first breakdown voltage of the first constant voltage element required for the conduction of the current path on the first constant voltage element and the first potential is forward of the second constant voltage element, and that when the first potential is lowered after the first potential is applied, a second potential charging the capacitive element under the first potential, relative to the reference potential at one end of the current path, generates a second breakdown voltage of the second constant voltage element in the opposite polarity to the first potential on the second constant voltage element and the second potential is forward of the first constant voltage element. <P>COPYRIGHT: (C)2013,JPO&INPIT |
