| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a silicon carbide substrate having a plurality of single crystal substrates, the gaps between which are sufficiently filled. <P>SOLUTION: A composite substrate is formed by bonding a base layer 30 to each of a plurality of the single crystal substrates 11a, 12a, 13a. Because a plurality of the single crystal substrates 11a, 12a, 13a are located separately from each other on the base layer 30, grooves TRa are formed with sidewalls made of end faces of each of a plurality of the single crystal substrates 11a, 12a, 13a adjoining each other and bottom faces made of the base layer. A feedstock section 29 made of silicon carbide is disposed facing the grooves TRa. The silicon carbide subliming from the feedstock section 29 recrystallizes on the bottom faces to fill the grooves TRa. <P>COPYRIGHT: (C)2013,JPO&INPIT |
