| 摘要 |
The invention addresses the problem of providing an n-type semiconductor comprising silicon carbide, the n-type semiconductor being able to be formed at a low temperature as a film, having a wide band gap, and being able to be produced at low cost. The problem is solved with an n-type semiconductor which comprises an amorphous silicon carbide doped with nitrogen, characterized by comprising silicon, carbon, and nitrogen as effective components, the ratio of the number of silicon atoms to the number of carbon atoms being 1:(3-5) and the proportion of the number of nitrogen atoms to the total number of silicon and carbon atoms being 1-5%, and with a process for producing an n-type semiconductor element, characterized by using at least one silane compound selected from alkylsilane compounds and alkoxysilane compounds and a silazane compound as raw materials and forming an n-type semiconductor as a thin film on a substrate by a plasma-assisted CVD method.
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