发明名称 SINGLE CRYSTAL MANUFACTURING METHOD
摘要 <p>In this single crystal manufacturing method using CZ method, Ni concentration of at least one black lead component used in a furnace for manufacturing a single crystal is analyzed, and the single crystal is manufactured by using a black lead component having an analyzed Ni concentration of 30 ppb or less. Consequently, the method for manufacturing the high-quality single crystal having no LT (life time) deterioration and LPD (light point defect) abnormalities generated therein in the single crystal manufacture using the CZ method is provided.</p>
申请公布号 WO2013065232(A1) 申请公布日期 2013.05.10
申请号 WO2012JP06288 申请日期 2012.10.02
申请人 SHIN-ETSU HANDOTAI CO.,LTD. 发明人 IWASAKI, ATSUSHI
分类号 C30B15/10;C30B29/06 主分类号 C30B15/10
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