| 摘要 |
<p>This photoelectric conversion element is formed by laminating, in order, a substrate, a lower electrode, an organic layer which generates charge by light irradiation, an upper electrode which transmits light, a buffer layer and a protective film. The buffer layer is formed from hydrogenated silicon oxide containing hydrogen ions, and is 1-100nm thick. The protective film contains hydrogenated silicon nitride containing hydrogen ions, or a hydrogenated silicon oxynitride compound containing hydrogen ions, and is 30-500nm thick.</p> |
