发明名称 Micro-Plasma Field Effect Transistors
摘要 In some aspects, a micro-plasma device comprises a plasma gas enclosure containing at least one plasma gas, a plasma generation circuit interfaced with the plasma gas enclosure, and a plurality of electrodes interfaced with the plasma gas enclosure. In other aspects, a micro-plasma circuitry apparatus comprises a first layer having plasma generating electrodes, a second layer having a cavity formed therein, and a third layer having a circuit formed therein. The circuit includes a micro-plasma circuit (MPC) that includes one or more micro-plasma devices (MPDs). A metallic layer covers the MPC except at locations of the MPDs. The first layer is bonded to the second layer and the second layer is bonded to the third layer, thereby forming an enclosure that contains at least one plasma gas.
申请公布号 US2013113370(A1) 申请公布日期 2013.05.09
申请号 US201213586717 申请日期 2012.08.15
申请人 TABIB-AZAR MASSOOD;UNIVERSITY OF UTAH RESEARCH FOUNDATION 发明人 TABIB-AZAR MASSOOD
分类号 H01J17/04 主分类号 H01J17/04
代理机构 代理人
主权项
地址