发明名称 Terminal connection structure for semiconductor device
摘要 <p>A first wiring member and a second wiring member, through which currents flow in directions opposite to each other, each have a flat plate shape and are arranged to be adjacent and opposed to each other, to thereby reduce inductances of the first wiring member and the second wiring member due to an effect of a mutual inductance. A joint of the first wiring member and a joint of the second wiring member are joined to the positive terminal and the negative terminal of the semiconductor device through ultrasonic bonding, respectively. As a result, the joint of the first wiring member and the joint of the second wiring member are not required to be provided with exclusive portions for screw mounting unlike a conventional manner, so each of the joints can have a small area, to thereby making it possible to reduce inductances of the first wiring member and the second wiring member.</p>
申请公布号 EP1722413(A3) 申请公布日期 2013.05.08
申请号 EP20060113040 申请日期 2006.04.25
申请人 KABUSHIKI KAISHA TOYOTA JIDOSHOKKI 发明人 NAGASE, TOSHIAKI;ONISHI, HIROYUKI;ISHIKAWA, JUN
分类号 H01L23/482;H01G4/228;H01L23/485;H01L25/07;H02M7/00 主分类号 H01L23/482
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