| 摘要 |
<p>919,947. Semi-conductor devices. WESTING- HOUSE ELECTRIC CORPORATION. Aug. 2, 1961 [Sept. 6, 1960], No. 28088/61. Class 37. In a semi-conductor device, metal support plates 10, 14 having a coefficient of expansion substantially the same as that of a semiconductor wafer 11 are soldered to opposite faces of the wafer and at least one further metal plate 20 (23), having a similar coefficient of expansion to that of plates 10, 14 is hard soldered or brazed to terminal member(s) 17 (18) and is soft soldered to plate(s) 10 (14). A power rectifier comprises a disc (1 inch diameter) of germanium 11 attached on one face to a molybdenum, tungsten or tantalum electrode 10 by a tin alloy solder 12 and on the other to a similar electrode 14 by a fused layer of indium 13 which thereby forms a PN junction with the germanium, the function being formed and the electrodes being fixed by heating the assembly to 615‹ C. The rectifier may also be made from a silicon disc using an aluminium solder 12 and a gold-antimony layer 13, the assembly in this case being heated to 895‹ C. Metal plates 20, 23 of molybdenum, tungsten or tantalum are silver soldered (at about 600‹ C.) to copper terminals 17, 18, these modified terminals then being tin soldered (at about 232‹ C.) to electrodes 10, 14 respectively. The device may be hermetically encapsulated by metallic members 27, 27<SP>1</SP> and insulating member 28 as shown. It is stated that this method of construction may be applied to other devices, e.g. controlled rectifiers and transistors. Specifications 777,985 and 832,067 are referred to.</p> |
