MULTIPLE FREQUENCY SPUTTERING FOR ENHANCEMENT IN DEPOSITION RATE AND GROWTH KINETICS DIELECTRIC MATERIALS
摘要
A method of sputter depositing dielectric thin films may comprise: providing a substrate on a substrate pedestal in a process chamber, the substrate being positioned facing a sputter target; simultaneously applying a first RF frequency from a first power supply and a second RF frequency from a second power supply to the sputter target; and forming a plasma in the process chamber between the substrate and the sputter target, for sputtering the target; wherein the first RF frequency is less than the second RF frequency, the first RF frequency is chosen to control the ion energy of the plasma and the second RF frequency is chosen to control the ion density of the plasma. The self-bias of surfaces within said process chamber may be selected; this is enabled by connecting a blocking capacitor between the substrate pedestal and ground.
申请公布号
WO2013036953(A3)
申请公布日期
2013.05.02
申请号
WO2012US54501
申请日期
2012.09.10
申请人
APPLIED MATERIALS, INC.;JIANG, CHONG;KWAK, BYUNG, SUNG LEO;STOWELL, MICHAEL;ARMSTRONG, KARL
发明人
JIANG, CHONG;KWAK, BYUNG, SUNG LEO;STOWELL, MICHAEL;ARMSTRONG, KARL