| 摘要 |
<p>Disclosed is a thin film photoelectric conversion device containing a crystalline germanium photoelectric conversion layer, which has an improved open circuit voltage, an improved fill factor, and an improved photoelectric conversion efficiency against light having a long wavelength. The photoelectric conversion device comprises a first electrode layer, one or more photoelectric conversion units and a second electrode layer laminated sequentially on a substrate, wherein each of the photoelectric conversion units comprises a p-type semiconductor layer, an n-type semiconductor layer, and a photoelectric conversion layer arranged between the p-type semiconductor layer and the n-type semiconductor layer. A photoelectric conversion layer in at least one of the photoelectric conversion units is a crystalline germanium photoelectric conversion layer comprising a crystalline germanium semiconductor that is substantially of a true n-type or weak n-type and contains substantially no silicon atom. A first interface layer which is a substantially true amorphous silicon semiconductor layer is arranged between the p-type semiconductor layer and the crystalline germanium photoelectric conversion layer.</p> |
