| 摘要 |
PURPOSE: A method for forming a gate insulating film and a method for manufacturing a liquid crystal display device are provided to improve an ITO(Indium Tin Oxide) haze phenomenon of a pixel electrode, a cooper hillock phenomenon of a gate electrode, and a birdcaging phenomenon of the gate insulating film. CONSTITUTION: A lower substrate, which includes a pixel electrode, a gate electrode, and a gate line, is loaded in a chamber(SS1). The substrate is washed by using the small amount of nitrogen gas(SS2). A buffer layer is deposited in the front of the substrate(SS3). A first gate insulating film is deposited on an upper part of the buffer layer(SS4). A second gate insulating film is deposited on an upper part of the first gate insulting film(SS5). [Reference numerals] (SS1) Loading a substrate in a chamber; (SS2) Washing the substrate by using N_2 gas; (SS3) Depositing a buffer layer in the upper part of the substrate by using N_2 and SiH_4 mixing gas; (SS4) Depositing a first gate insulating film on the upper part of the buffer layer by using N_2, NH_3, and SiH_4 mixing gas; (SS5) Depositing a second gate insulating film on the upper part of the first gate insulating film by using the N_2, NH_3, and SiH_4 mixing gas; |
