<p>Memristive elements are provided that include an active region disposed between a first electrode and a second electrode. The active region includes an switching layer of a first metal oxide and a conductive layer of a second metal oxide, where a metal ion of the first metal oxide differs from a metal ion of the second metal oxide. The memristive element exhibits a nonlinear current-voltage characteristic in the low resistance state based on the oxide hetero-junction between the first metal oxide and the second metal oxide. Multilayer structures that include the memristive elements also are provided.</p>
申请公布号
WO2013058760(A1)
申请公布日期
2013.04.25
申请号
WO2011US57230
申请日期
2011.10.21
申请人
HEWLETT-PACKARD DEVELOPMENT COMPANY;YANG, JIANHUA;ZHANG, MINXIAN MAX;WILLIAMS, STANLEY R
发明人
YANG, JIANHUA;ZHANG, MINXIAN MAX;WILLIAMS, STANLEY R