| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that allows preventing an increase in the resistance of gate wiring. <P>SOLUTION: A method of manufacturing a semiconductor device comprises the steps of: stacking a semiconductor substrate, a first insulating film on the semiconductor substrate, a charge storage layer on the first insulating film, and forming a desired trench to form a semiconductor element in a first region and a second region; forming an element isolation film in the trench; forming a stopper film 30 on the element isolation film and the charge storage layer; coating the second region with a second insulating film and etching back the stopper film 30 in the first region and the element isolation film; and forming wiring on the etched-back element isolation film, the charge storage layer, and the stopper film 30 in the second region via a third insulating film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
