发明名称 APPARATUS AND METHOD FOR PRODUCING SINGLE CRYSTAL
摘要 <P>PROBLEM TO BE SOLVED: To provide an apparatus and method for producing a single crystal, which can provide the single crystal having preferable crystallinity by reducing variation of temperature distribution in the crystal growth surface. <P>SOLUTION: An apparatus 20 for producing a single crystal includes: a growth vessel 10 having a raw material disposition unit 4a disposing a raw material 6 of the single crystal and a seed crystal disposition unit 7a disposing the seed crystal 5 facing the raw material 6; and a heating means 8 for heating the growth vessel 10, wherein: the growth vessel 10 has a rectangular shape of longitudinal section in the inner space S; the aspect ratio of the long side and the short side (long-side dimension/short-side dimension) in the rectangular longitudinal section is larger than 2; and the seed crystal disposition unit 7a is disposed in the central division when the inner space S of the growth vessel 10 is divided into three equal parts in the long-side direction. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013075793(A) 申请公布日期 2013.04.25
申请号 JP20110216989 申请日期 2011.09.30
申请人 FUJIKURA LTD;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE& TECHNOLOGY 发明人 HATADA SHINJI;KATO TOMOHISA;MIURA TOMONORI
分类号 C30B23/06;C30B29/38 主分类号 C30B23/06
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