REPLACEMENT GATE MULTIGATE TRANSISTOR FOR EMBEDDED DRAM
摘要
A memory cell, an array of memory cells, and a method for fabricating a memory cell with multigate transistors such as fully depleted finFET or nano-wire transistors in embedded DRAM. The memory cell includes a trench capacitor, a non-planar transistor, and a self-aligned silicide interconnect electrically coupling the trench capacitor to the non-planar transistor.
申请公布号
WO2013059010(A1)
申请公布日期
2013.04.25
申请号
WO2012US59154
申请日期
2012.10.06
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;CHANG, JOSEPHINE, B;CHANG, LELAND;GUILLORN, MICHAEL, A.;HAENSCH, WILFRIED, E.
发明人
CHANG, JOSEPHINE, B;CHANG, LELAND;GUILLORN, MICHAEL, A.;HAENSCH, WILFRIED, E.