发明名称
摘要 A method for manufacturing a wafer level package is provided that enables suppressing the wearing of a cutter and extending the lifetime of the cutter, including forming insulating first resin over the top face of a substrate, which includes a groove for wiring to be formed; forming a film of first metal that is to serve as a portion of the wiring on the top face of the first resin using physical vapor deposition; forming a film of second metal that is to form a portion of the wiring on the top face of the first metal, with a lower hardness than the first metal; setting a cutter at a height corresponding to a place where the film of the first metal is not formed on a side face of the groove or the film thickness is low; and cutting at least the first resin by scanning the cutter.
申请公布号 JP5189665(B2) 申请公布日期 2013.04.24
申请号 JP20110056004 申请日期 2011.03.14
申请人 发明人
分类号 H01L23/12;H01L21/3205;H01L21/768;H01L23/522 主分类号 H01L23/12
代理机构 代理人
主权项
地址