发明名称 |
Non-volatile semiconductor storage device and method of manufacturing the same |
摘要 |
A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a columnar semiconductor layer extending in a direction perpendicular to a substrate; a plurality of conductive layers formed at a sidewall of the columnar semiconductor layer via memory layers; and interlayer insulation layers formed above of below the conductive layers. A sidewall of the conductive layers facing the columnar semiconductor layer is formed to be inclined such that the distance thereof from a central axis of the columnar semiconductor layer becomes larger at lower position thereof than at upper position thereof. While, a sidewall of the interlayer insulation layers facing the columnar semiconductor layer is formed to be inclined such that the distance thereof from a central axis of the columnar semiconductor layer becomes smaller at lower position thereof than at upper position thereof. |
申请公布号 |
US8426976(B2) |
申请公布日期 |
2013.04.23 |
申请号 |
US20090392636 |
申请日期 |
2009.02.25 |
申请人 |
ISHIDUKI MEGUMI;AOCHI HIDEAKI;KATSUMATA RYOTA;TANAKA HIROYASU;KIDOH MASARU;KITO MASARU;FUKUZUMI YOSHIAKI;KOMORI YOSUKE;MATSUOKA YASUYUKI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
ISHIDUKI MEGUMI;AOCHI HIDEAKI;KATSUMATA RYOTA;TANAKA HIROYASU;KIDOH MASARU;KITO MASARU;FUKUZUMI YOSHIAKI;KOMORI YOSUKE;MATSUOKA YASUYUKI |
分类号 |
H01L29/792;H01L21/28 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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