| 摘要 |
<P>PROBLEM TO BE SOLVED: To simplify the formation process of a semiconductor device including a planar transistor and a three-dimensional transistor formed on a semiconductor substrate. <P>SOLUTION: In the semiconductor device including a planar transistor and a three-dimensional transistor formed on a semiconductor substrate, both the planar transistor and three-dimensional transistor have a gate insulator composed of a high dielectric constant material, the planar transistor has, on the gate insulator, a gate electrode composed of a first metal material (A) on the lower side and of a second metal material (B) on the upper side, whereas the three-dimensional transistor has an embedded gate electrode, and the same material as the first metal material (A) is used on the lower side of the embedded gate electrode, and the same material as the second metal material (B) is used on the upper side of the embedded gate electrode. <P>COPYRIGHT: (C)2013,JPO&INPIT |
