| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a CVD apparatus which forms a thin film having uniform film thickness distribution. <P>SOLUTION: In the CVD apparatus 2, an exhaust port 31 is provided in an exhaust space 72. An entrance 44 of an exhaust flow passage 41 which connects a deposition space 71 and the exhaust space 72 encloses the deposition space 71 at the middle position in the height direction of the deposition space 71. When source gas is emitted from a shower plate 20 while gas in the deposition space 71 is evacuated from an exhaust port 46 via the exhaust space 72 and the exhaust flow passage 41 by an evacuation device 33, the gas in the deposition space 71 flows into the entrance 44 while the main streamline direction thereof is maintained in parallel with a substrate surface, so that a uniform thin film is formed on the surface of the substrate 14. The conductance of the exhaust flow passage 41 is set to be smaller than that of the exhaust space 72, and uniform evacuation is performed from any position of the entrance 44. <P>COPYRIGHT: (C)2013,JPO&INPIT |
