发明名称 RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist protective film material that has high water-repellent and highly water-sliding properties, causes few development defect,and achieves a satisfactory resist pattern after development, a resist protective film material for immersion lithography in particular, and a pattern formation method using the material. <P>SOLUTION: The resist protective film material contains a polymer compound comprising a repeat unit represented by the general formula (1) and having weight-average molecular weight between 1,000 and 500,000. (In the formula, R<SP POS="POST">4</SP>to R<SP POS="POST">6</SP>represent a fluorinated monovalent hydrocarbon group.) The present invention provides a resist protective film material having a repeat unit containing a highly water-repellent and highly water-sliding fluorine-containing cyclic acetal. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013073019(A) 申请公布日期 2013.04.22
申请号 JP20110211979 申请日期 2011.09.28
申请人 SHIN ETSU CHEM CO LTD 发明人 SUGA YUKI;SAGEHASHI MASAYOSHI;HARADA YUJI
分类号 G03F7/11;C08F20/28;G03F7/38;H01L21/027 主分类号 G03F7/11
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