SUBSTRATE FOR VERTICAL TYPE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A substrate for a vertical type semiconductor device and a method for manufacturing the same are provided to bond a heterogeneous substrate to a compound semiconductor layer using a bonding layer, and to improve adhesion. CONSTITUTION: A bonding layer(200) is formed on a heterogeneous substrate(100). A compound semiconductor layer(300) is formed on the heterogeneous layer. The compound semiconductor layer is made of GaN. The thickness of the heterogeneous layer is 1nm-100Mm. A reflection layer is formed between the heterogeneous layer and the compound semiconductor layer.