FIELD EFFECT TRANSISTOR APPARATUS, DEVICE AND METHOD FOR SENSING DEFORMATION

摘要

An apparatus comprising: a first layer (201) configured to enable a flow of charge carriers from a source electrode (203) to a drain electrode (204), a second layer (206) configured to control the density of charge carriers in the first layer (201) using an electric field formed between the first (201) and second (206) layers, and a third layer (211) positioned between the first (201) and second (206) layers to shield the first layer (201) from the electric field, wherein the third layer (211) comprises a layer of electrically conducting nanopartides (212) and is configured such that when stress is applied to the third layer (211), the strength of the electric field experienced by the first layer (201) is varied resulting in a change in the charge carrier density and a corresponding change in the conductance of the first layer (201).