SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

Single crystal substrates (1-9) are composed of a silicon carbide, and respectively have first front surfaces (1a, 2a, 3a) and first rear surfaces (1b, 2b, 3b), said first front surfaces and first rear surfaces facing each other. A supporting substrate (10) has a second front surface (10a) and a second rear surface (10b) that face each other. A connecting layer (11) has a silicon carbide as a main component, is provided between the single crystal substrates (1-9) and the supporting substrate (10), and connects respective first rear surfaces (1b, 2b, 3b) with the second front surface (10a) such that respective first rear surfaces (1b, 2b, 3b) face the second front surface (10a).