| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with low voltage and high luminance. <P>SOLUTION: There is provided a semiconductor light-emitting element including first and second electrode layers, first and second semiconductor layers, a light-emitting layer, and a first intermediate layer. The first electrode layer has a metallic portion. In the metallic portion, a plurality of through holes having a circle equivalent diameter of 10 nm or more to 5 μm or less are provided. The second electrode layer has light reflectivity. The first semiconductor layer is provided between the first electrode layer and the second electrode layer, and has a first conductivity type. The second semiconductor layer is provided between the first semiconductor layer and the second electrode layer, and has a second conductivity type. The light-emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The first intermediate layer is provided between the second semiconductor layer and the second electrode layer, and has light permeability. The first intermediate layer includes a plurality of first contact portions and a first non-contact portion. The first non-contact portion is in juxtaposition with the first contact portions in a surface perpendicular to the stacking direction. <P>COPYRIGHT: (C)2013,JPO&INPIT |
