| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce dislocation density of a semiconductor crystal layer composed of a nitride semiconductor when forming the semiconductor crystal layer above a base substrate such as a silicon wafer. <P>SOLUTION: There is provided a manufacturing method of a semiconductor substrate in which a base substrate, an adhesive layer, a buffer layer, and an active layer are arranged in this order, an Si exists in a region where the base substrate touches the adhesive layer, and the adhesive layer, the buffer layer, and the active layer are composed of a nitride semiconductor comprising the steps of: exposing a surface of the base substrate to a mixed gas of ammonia gas and carrier gas while keeping a temperature of the base substrate at 1000°C or higher after installing the base substrate in a growth chamber of an epitaxial crystal growth device; and sequentially forming the adhesive layer, the buffer layer, and the active layer on the base substrate by an epitaxial growth method after exposing the surface of the base substrate to the mixed gas. <P>COPYRIGHT: (C)2013,JPO&INPIT |
