发明名称 |
Apparatus, system, and method for tunneling MOSFETs using self-aligned heterostructure source and isolated drain |
摘要 |
Apparatuses, systems, and methods for tunneling MOSFETs (TFETs) using a self-aligned heterostructure source and isolated drain. TFETs that have an abrupt junction between source and drain regions have an increased probability of carrier direct tunneling (e.g., electrons and holes). The increased probability allows a higher achievable on current in TFETs having the abrupt junction. |
申请公布号 |
US8421165(B2) |
申请公布日期 |
2013.04.16 |
申请号 |
US20100777877 |
申请日期 |
2010.05.11 |
申请人 |
LOH WEI-YIP;JEON KANGHOON;PARK CHANRO;SEMATECH, INC. |
发明人 |
LOH WEI-YIP;JEON KANGHOON;PARK CHANRO |
分类号 |
H01L21/02;H01L21/336 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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