| 摘要 |
A thin film patterning method and a TFT substrate manufacturing method using the same are provided to pattern a thin film by directly spraying a patterning liquid as an etching liquid or a developing liquid onto the thin film without a special exposing or developing process, thereby reducing the number of processes. On a substrate, a gate metal pattern is formed. The gate metal pattern includes a gate line, a gate electrode(106) of a TFT(Thin Film Transistor) and a gate pad lower electrode(152) of a gate pad. A gate insulating layer(112) covering the gate metal pattern is formed. On the gate insulating layer, a semiconductor pattern(115) is formed. On the semiconductor pattern, a source/drain metal pattern is formed. The source/drain metal pattern includes a data line(104) crossing the gate line, source/drain electrodes(108,110) of the TFT, and a data pad lower electrode(162) of a data pad. To cover the source/drain metal pattern, a passivation layer(118) is formed. Pixel contact holes, a data pad contact hole and a gate pad contact hole are formed by dropping a patterning liquid(180) onto the passivation layer. The pixel contact holes respectively expose the data/gate pad lower electrodes. On the passivation layer, a transparent electrode pattern is formed. The transparent electrode pattern includes a pixel electrode connected to the drain electrode, a data pad upper electrode connected to the data pad lower electrode, and a gate pad upper electrode connected to the gate pad lower electrode. |
