| 摘要 |
A method and apparatus for etching photomasks is provided herein. In one embodiment, the apparatus comprises a process chamber (102) having a support pedestal (124) adapted for receiving a photomask. An ion-neutral shield (170) is disposed above the pedestal and a deflector plate assembly (200) is provided above the ion-neutral shield. The deflector plate assembly defines a gas flow direction for process gases towards the ion-neutral shield, while the ion-neutral shield is used to establish a desired distribution of ion and neutral species in a plasma for etching the photomask. |
