发明名称 |
SEMICONDUCTOR DEVICE HAVING A MULTILEVEL INTERCONNECT STRUCTURE AND METHOD FOR FABRICATING THE SAME |
摘要 |
A multilevel interconnect structure in a semiconductor device and methods for fabricating the same are described. The multilevel interconnect structure in the semiconductor device includes a first insulating layer formed on a semiconductor wafer, a Cu interconnect layer formed on the first insulating layer, a second insulating layer formed on the Cu interconnect layer, and a metal oxide layer formed at an interface between the Cu interconnect layer and the second insulating layer. The metal oxide layer is formed by immersion-plating a metal, such as Sn or Zn, on the Cu interconnect layer and then heat-treating the plated layer in an oxidizing atmosphere.
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申请公布号 |
US2013089979(A1) |
申请公布日期 |
2013.04.11 |
申请号 |
US201213633562 |
申请日期 |
2012.10.02 |
申请人 |
SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH;NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY;NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY;SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER |
发明人 |
KOIKE JUNICHI;FUJII YOSHITO;IIJIMA JUN;SHIMIZU NORIYOSHI;MAEKAWA KAZUYOSHI;ARITA KOJI;YAGI RYOTARO;YOSHIMARU MASAKI |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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