INSULATING FILM AND PRODUCTION METHOD FOR SAME

摘要

Provided is an insulating film containing silicon atoms, fluorine atoms, and nitrogen atoms, wherein the insulating film is furnished with a first silicon nitride film disposed on a substrate containing oxygen atoms, and a second silicon nitride film disposed in contact with the first silicon nitride film, the amount of fluorine contained in the second silicon nitride film being greater than the amount of fluorine contained in the first silicon nitride film. Also provided is a semiconductor element having an oxide semiconductor layer containing indium atoms and oxygen atoms, and an insulating film containing silicon atoms, fluorine atoms, and nitrogen atoms. The semiconductor element can be made into a thin-film transistor.