发明名称 |
THIN FILM TRANSISTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
<p>In the thin-film transistor device: the stacked thickness of either a source electrode or a drain electrode and a corresponding one of silicon layers is the same value or a value close to the same value as the stacked thickness of a first channel layer and a second channel layer; the stacked thickness of the first channel layer and the second channel layer is the same in a region between the source electrode and the drain electrode and above the source electrode and the drain electrode; the first channel layer and the second channel layer are sunken in the region between the source electrode and the drain electrode, following a shape between the source electrode and the drain electrode; and the gate electrode has one region overlapping with the source electrode and an other region overlapping with the drain electrode.</p> |
申请公布号 |
KR20130036136(A) |
申请公布日期 |
2013.04.11 |
申请号 |
KR20117024419 |
申请日期 |
2011.03.17 |
申请人 |
PANASONIC LIQUID CRYSTAL DISPLAY CO., LTD.;PANASONIC CORPORATION |
发明人 |
NAGAI HISAO;HOTTA SADAYOSHI;KAWACHI GENSHIRO |
分类号 |
H01L29/786;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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