| 摘要 |
<p>A solid-state imaging device 1 includes a light receiving section 10, a first row selecting section 20, a second row selecting section 30, and the like. The first row selecting section 20 causes each pixel unit of any m1-th row in the light receiving section 10 to discharge a junction capacitance section of a photodiode, and to output data corresponding to an amount of charge generated in the photodiode to a readout signal line L1 n . The second row selecting section 30 causes each pixel unit of any m2-th row in the light receiving section 10 to discharge a junction capacitance section of a photodiode, and to output data corresponding to an amount of charge generated in the photodiode to a readout signal line L2 n . The solid-state imaging device 1 causes each pixel unit of any m3-th row in the light receiving section 10 to discharge a junction capacitance section of a photodiode, and to accumulate charge generated in the photodiode in a charge accumulating section. m1 and m2 are different from each other.</p> |
