Stacked semiconductor devices

摘要

A stacked semiconductor device (700) includes a first and a second semiconductor device (100). A first major surface of each of the first and second devices which includes the active circuitry directly face each other. The first major surface of each of the devices includes a beveled edge (114) on at least one edge, and a probe pad (118 or 120) which extends onto the beveled edge. A first opening (702) is located between the beveled edges of the first and second devices on a vertical side of the stacked semiconductor device.