MANUFACTURING METHOD FOR SIC SUBSTRATE

摘要

PURPOSE: A method for manufacturing a silicon carbide substrate is provided to secure a flat SiC substrate through a post process without depositing a thick SiC. CONSTITUTION: A SiC layer is deposited on a graphite disk. The graphite disk is removed to separate the SiC substrate. Therefore, the SiC substrate is bent. A heat process is performed on the SiC substrate under a pressure condition to obtain a flat SiC substrate(4). The temperature and the pressure of the heat process are 1800-2100>= and 069±0.01kg/cm^2.