METHOD FOR SEPARATING EPITAXIAL GROWTH LAYER FROM GROWTH SUBSTRATE
摘要
PURPOSE: An epi layer for separating a growth substrate and a method thereof are provided to easily separate the epi layer from a growth substrate by using a notch which is formed in the growth substrate. CONSTITUTION: A growth substrate(100) is formed. A notch(150) is formed in the edge of the growth substrate. An epi layer(410) is formed on the growth substrate. A support substrate(420) is adhered on the epi layer. The epi layer is separated from the growth substrate by using the notch.
申请公布号
KR20130034480(A)
申请公布日期
2013.04.05
申请号
KR20110098509
申请日期
2011.09.28
申请人
SEOUL OPTO DEVICE CO., LTD.
发明人
SHIN, HONG KYU;LEE, KYU HO;CHOI, JOO WON;CHOI, HYO SHIK;SUH, DAE WOONG;IN, CHI HYUN;CHAE, JONG HYEON