发明名称 PHOTORESIST COMPOSITION AND RESIST PATTERN FORMING METHOD
摘要 <p>The present invention involves a photoresist composition containing (A) a polymer having a structural unit (I) represented by formula (1), and (B) an acid-generating body, wherein the Van der Waals volume of the acid generated from the acid-generating body (B) is not less than 2.1 × 10-28m3. In formula (1): R1 is a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group. R2 and R3 are, independently, each a hydrogen atom, a fluorine atom, a hydroxy group or a monovalent organic group with one to twenty carbons, or R2 and R3 are combined with each other to represent a ring structure with three to twenty carbons constituted in conjunction with a carbon atom to which R2 and R3 are bonded; and R4 and R5 are, independently, each a hydrogen atom or a monovalent organic group with one to twenty carbons, or R4 and R5 are combined with each other to represent a ring structure with three to twenty carbons constituted in conjunction with a carbon atom to which R4 and R5 are bonded. n is an integer from one to four.</p>
申请公布号 WO2013047528(A1) 申请公布日期 2013.04.04
申请号 WO2012JP74576 申请日期 2012.09.25
申请人 JSR CORPORATION 发明人 KASAHARA KAZUKI;IKEDA NORIHIKO
分类号 G03F7/004;G03F7/039 主分类号 G03F7/004
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