NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

This nitride semiconductor device is provided with: an undoped GaN layer (1) and an undoped AlGaN layer (2), which are formed on a Si substrate (10); and ohmic electrodes (a source electrode (11) and a drain electrode (12)), which are composed of Ti/Al/TiN and formed on the undoped GaN layer (1) and the undoped AlGaN layer (2). Concentration of nitrogen in the ohmic electrodes is set at 1×1016 cm-3 or more but equal to or less than 1 ×1020cm-3. Consequently, contact resistance between the nitride semiconductor layer and the ohmic electrode can be reduced.