| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device that allows improving reading speed and to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor memory device includes a stack having a plurality of electrode films and interlayer insulating films provided by alternately stacking both films, semiconductor pillars penetrating through the stack in the stacking direction, charge storage films provided between the semiconductor pillars and the electrode films, and additional portions provided on side surfaces of the semiconductor pillars. The semiconductor pillars are formed using a semiconductor material containing germanium, and the additional portions are formed using aluminum oxide. <P>COPYRIGHT: (C)2013,JPO&INPIT |
