| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can achieve a high breakdown voltage and low on-resistance at the same time and can be easily manufactured, and provide a manufacturing method of the semiconductor device. <P>SOLUTION: A semiconductor device according to an embodiment comprises: a first conductivity type semiconductor layer; a second conductivity type first semiconductor region provided on a first principal surface of the semiconductor layer; a first conductivity type second semiconductor region selectively provided on a surface of the first semiconductor region; a first control electrode facing the first semiconductor region and the second semiconductor region via an insulation film inside a trench provided in the semiconductor layer; and a second control electrode extending from the first principal surface side to a bottom face side of the trench and located closer to the bottom face than the first control electrode. The semiconductor layer is provided at a depth between an edge of the first semiconductor region on a second principal surface side and an edge of the second control electrode on the bottom face side and includes a first part having a first conductivity type carrier concentration lower than that of another part of the semiconductor layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
