SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

This MOSFET (1) is provided with a semiconductor substrate having a trench formed on the main surface (10A), a gate oxide film (30), a gate electrode (40), and source wiring (60). The semiconductor substrate (10) includes an n-type drift layer (12), and a p-type body layer (13). The trench is formed in such a manner as to penetrate the body layer (13) and reach the drift layer (12). The trench includes an outer peripheral trench (22) positioned in such a manner as to encircle an active region in a plan view. A fixed potential region (10C), in which the body layer (13) is exposed, is formed on the main surface (10A) on the opposite side of the active region, as viewed from the outer peripheral trench (22). The source wiring (60) is positioned in such a manner as to overlap with the active region in a plan view. The fixed potential region (10C) is electrically connected to the source wiring (60).