发明名称 PHOTORESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYMER
摘要 <p>The present invention is a photoresist composition containing the following: a polymer (A) that has a constitutional unit (I) represented by diagram (1); and an acid generator (B). In diagram (1), R1, R2, R4, and R6 each independently represent a hydrogen atom, a fluorine atom, a hydroxy group, or a C1-20 monovalent organic group; either R3 and R5 each independently represent a hydrogen atom, a fluorine atom, a hydroxy group, or a C1-20 monovalent organic group or R3 and R5 are combined and, together with the carbon atoms bound thereto, represent a C3-10 cyclic group; and R7 represents a hydrogen atom or a methyl group.</p>
申请公布号 WO2013047117(A1) 申请公布日期 2013.04.04
申请号 WO2012JP72513 申请日期 2012.09.04
申请人 JSR CORPORATION;SATO MITSUO 发明人 SATO MITSUO
分类号 G03F7/039;C08F20/10;H01L21/027 主分类号 G03F7/039
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