| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure suitable for a semiconductor element made of SiC. <P>SOLUTION: A semiconductor device 2 comprises: a semiconductor element 20 made of SiC; a first mold resin 50 covering an outer periphery of the semiconductor element 20; a second mold resin 70 whose heat resistance is lower than heat resistance of the first mold resin 50 and which covers an outer periphery of the first mold resin 50; and a temperature sensor 60 disposed in the second mold resin 70. The temperature sensor 60 is in the second mold resin 70, is disposed in a position in contact with the first mold resin 50, and faces a surface of the semiconductor element 20. <P>COPYRIGHT: (C)2013,JPO&INPIT |
