发明名称 CMOS IMAGE SENSOR WITH RESET SHIELD LINE
摘要 Techniques and mechanisms to improve potential well characteristics in a pixel cell. In an embodiment, a coupling portion of a pixel cell couples a reset transistor of the pixel cell to a floating diffusion node of the pixel cell, the reset transistor to reset a voltage of the floating diffusion node. In another embodiment, the pixel cell includes a shield line which extends athwart the coupling portion, where the shield line is to reduce a parasitic capacitance of the reset transistor to the floating diffusion node.
申请公布号 US2013082313(A1) 申请公布日期 2013.04.04
申请号 US201113251036 申请日期 2011.09.30
申请人 MANABE SOHEI;OMNIVISION TECHNOLOGIES, INC. 发明人 MANABE SOHEI
分类号 H01L27/146 主分类号 H01L27/146
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