| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can increase a withstanding voltage in a horizontal direction while preventing adverse effect caused by implantation of an impurity ion. <P>SOLUTION: A semiconductor device comprises: a pair of impurity regions which compose an element and are formed in a surface layer on a first principal surface of a semiconductor substrate, and in which a current flows; field plates 33 for ensuring a withstanding voltage in a horizontal direction; and further, an amorphous region 24 having the same component with the semiconductor substrate, which is provided at least in a region between a first impurity region and a second impurity region at a predetermined depth from the surface of the semiconductor substrate deeper than that of the first impurity region 37 and the second impurity region 38 which serve as current paths for the element. The amorphous layer is a layer having higher resistivity than a single crystal and a poly crystal and functions as a pseudo-field plate. The amorphous layer is formed by ion implantation of an inert element. <P>COPYRIGHT: (C)2013,JPO&INPIT |
