| 摘要 |
Provided is a method of manufacturing a semiconductor device capable of preventing, in a SOG etch back planarization process in a multi-layered wiring process, degradation in long-term reliability with respect to the entering of moisture caused by a fuse opening portion. A fuse is shaped so that polycrystalline silicon extends to a lower part of a guard ring provided in a first layer of metal for preventing the entering of moisture from the fuse opening portion. Thus, a metal wiring used for connection to an electrode of the fuse and a metal wiring of the guard ring become equal in height, and hence an SOG layer can be prevented from reaching the inside of an IC.
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