GRAPHENE AND POWER STORAGE DEVICE, AND MANUFACTURING METHOD THEREOF
摘要
The formation method of graphene includes the steps of forming a layer including graphene oxide over a first conductive layer; and supplying a potential at which the reduction reaction of the graphene oxide occurs to the first conductive layer in an electrolyte where the first conductive layer as a working electrode and a second conductive layer with a as a counter electrode are immersed. A manufacturing method of a power storage device including at least a positive electrode, a negative electrode, an electrolyte, and a separator includes a step of forming graphene for an active material layer of one of or both the positive electrode and the negative electrode by the formation method.
申请公布号
WO2013047630(A1)
申请公布日期
2013.04.04
申请号
WO2012JP74815
申请日期
2012.09.20
申请人
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;XTODORIKI, HIROATSU;SAITO, YUMIKO;KAWAKAMI, TAKAHIRO;NOMOTO, KUNIHARU;YUKAWA, MIKIO