发明名称 |
Apparatus for reducing photodiode thermal gain coefficient and method of making same |
摘要 |
An apparatus for reducing photodiode thermal gain coefficient includes a bulk semiconductor material having a light-illumination side. The bulk semiconductor material includes a minority charge carrier diffusion length property configured to substantially match a predetermined hole diffusion length value and a thickness configured to substantially match a predetermined photodiode layer thickness. The apparatus also includes a dead layer coupled to the light-illumination side of the bulk semiconductor material, the dead layer having a thickness configured to substantially match a predetermined thickness value and wherein an absolute value of a thermal coefficient of gain due to the minority carrier diffusion length property of the bulk semiconductor material is configured to substantially match an absolute value of a thermal coefficient of gain due to the thickness of the dead layer.
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申请公布号 |
US8409908(B2) |
申请公布日期 |
2013.04.02 |
申请号 |
US20090512714 |
申请日期 |
2009.07.30 |
申请人 |
LI WEN;SHORT JONATHAN D.;POSSIN GEORGE E.;GENERAL ELECTRIC COMPANY |
发明人 |
LI WEN;SHORT JONATHAN D.;POSSIN GEORGE E. |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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