发明名称 |
Semiconductor memory device and method of reducing consumption of standby current therein |
摘要 |
A semiconductor memory device comprises a memory array including a plurality of bit lines and a plurality of dummy bit lines, a bias application unit configured to supply bias voltages having a plurality of voltage levels to the plurality of dummy bit lines, a standby current measuring unit configured to measure a value of at least one of standby currents between at least one of the plurality of bit lines and at least one of the plurality of dummy bit lines. Each of the standby currents is generated by each of the bias voltages applied by the bias application unit. |
申请公布号 |
US8411520(B2) |
申请公布日期 |
2013.04.02 |
申请号 |
US20090654739 |
申请日期 |
2009.12.30 |
申请人 |
LEE MYUNG-JAE;KANG SANG SEOK;LIM JONG HYOUNG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE MYUNG-JAE;KANG SANG SEOK;LIM JONG HYOUNG |
分类号 |
G11C7/00;G11C29/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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